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Neutron dosimetry with planar silicon p-i-n diodes

Authors :
P. J. Griffin
V.L. Perevertailo
O.S. Zinets
Mark I. Reinhard
Iwan Cornelius
V.I. Khivrich
Mark Yudelev
Michael L. F Lerch
Igor E. Anokhin
Anatoly B. Rosenfeld
Dimitri Alexiev
M. Pinkovskaya
Source :
IEEE Transactions on Nuclear Science. 50:2367-2372
Publication Year :
2003
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2003.

Abstract

New nonionizing energy losses (NIEL) sensors based on silicon planar p-i-n diodes of different geometry have been investigated and their response to fast neutron field compared with bulk diodes. The possibility of obtaining a wide range of sensitivities in these NIEL sensors simultaneously with measurements of IEL has been demonstrated.

Details

ISSN :
15581578 and 00189499
Volume :
50
Database :
OpenAIRE
Journal :
IEEE Transactions on Nuclear Science
Accession number :
edsair.doi...........30686045e533ebf642139f482d5b1529