ÉTUDE PAR MICROSCOPIE ÉLECTRONIQUE EN TRANSMISSION DE DÉFAUTS CRÉÉS PAR IMPLANTATION IONIQUE DANS DU SILICIUM < III >

Silicon specimens have been implanted either with phosphorous ions (30 keV, 1016 at/cm2) or with arsenic ions (energies between 30 and 140 keV, doses in the order of 1015 at/cm2). In the case of phosphorous implantation, an amorphous layer has been observed using electron microscopy. The epitaxial recrystallization of this layer occurs at 650 &quot;C. During annealing at higher temperatures, the formation and evolution of defects such as dislocation loops and dipoles have been observed. In the case of arsenic implantations, the formation of defects such as microtwins, loops, linear defects ... takes place during the recrystallization of the amorphous layer.