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Polycrystalline Silicon Oxidation Kinetics and Si / SiO2 Interface Width
- Source :
- Journal of The Electrochemical Society. 133:2381-2385
- Publication Year :
- 1986
- Publisher :
- The Electrochemical Society, 1986.
- Subjects :
- Materials science
Renewable Energy, Sustainability and the Environment
business.industry
Interface (computing)
Kinetics
Nanocrystalline silicon
engineering.material
Condensed Matter Physics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Monocrystalline silicon
Polycrystalline silicon
Materials Chemistry
Electrochemistry
engineering
Optoelectronics
business
Subjects
Details
- ISSN :
- 19457111 and 00134651
- Volume :
- 133
- Database :
- OpenAIRE
- Journal :
- Journal of The Electrochemical Society
- Accession number :
- edsair.doi...........2ff88caedc7d804bd9d9c232ac4c83b5
- Full Text :
- https://doi.org/10.1149/1.2108412