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Highly sensitive, atmospheric pressure operatable sensor based on Au nanoclusters decorated TiO2@Au heterojunction nanorods for trace level NO2 gas detection

Authors :
Dinesh Veeran Ponnuvelu
Biji Pullithadathil
Baldev Raj
Sandip Dhara
Kamruddin Mohamed
A.K. Tyagi
Arun K. Prasad
Source :
Journal of Materials Science: Materials in Electronics. 28:9738-9748
Publication Year :
2017
Publisher :
Springer Science and Business Media LLC, 2017.

Abstract

A controlled synthetic strategy is established for the development of TiO2@Au heterojunction nanorods using a facile wet-chemical method for the detection of NO2 gas under atmospheric pressure conditions. Structural studies reveal the existence of metastable anatase phase along with thermodynamically stable rutile phase with high degree of crystallinity. The structural analysis divulges the uniform surface anchoring of Au nanoclusters onto mono-dispersed TiO2 nanorods introducing interfacial metal–semiconductor heterojunctions. TiO2@Au heterojunction nanorods exhibited excellent sensor performance towards trace level exposure of NO2 gas. Owing to the interfacial electron transfer process at the heterojunction the optimum operating temperature of TiO2@Au heterojunction nanorods determined to be 250 °C, which is much less as compared to pristine TiO2 gas sensors (400 °C). Sensor response was found to be linear for the trace level concentration range of 0.5–5 ppm with lowest detection limit as 500 ppb. The TiO2@Au heterojunction nanorods exhibited higher sensitivity at atmospheric pressure conditions compared to vacuum conditions because of the changes in surface O2 adsorption properties of the heterojunction material at different oxygen partial pressure and existence of mixed phases in TiO2 nanorods. The superior gas sensor performance of the material under atmospheric pressure conditions point towards their potential for real-time applications.

Details

ISSN :
1573482X and 09574522
Volume :
28
Database :
OpenAIRE
Journal :
Journal of Materials Science: Materials in Electronics
Accession number :
edsair.doi...........2ff269cf30c2f8193c7522789269362a
Full Text :
https://doi.org/10.1007/s10854-017-6725-9