Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal

MLA

Chandra Mohan Manoj Kumar, et al. “Record-Low Contact Resistance for InAlN/AlN/GaN High Electron Mobility Transistors on Si with Non-Gold Metal.” Japanese Journal of Applied Physics, vol. 54, Mar. 2015, p. 04DF12. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........2ff03d60a4efe7fcda6a53b576855cb7&authtype=sso&custid=ns315887.

APA

Chandra Mohan Manoj Kumar, S. C. Foo, Sukant K. Tripathy, K. Ranjan, Geok Ing Ng, Thirumaleshwara N. Bhat, Kian Siong Ang, S. Vicknesh, Subramaniam Arulkumaran, & Surani Bin Dolmanan. (2015). Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal. Japanese Journal of Applied Physics, 54, 04DF12.

Chicago

Chandra Mohan Manoj Kumar, S. C. Foo, Sukant K. Tripathy, K. Ranjan, Geok Ing Ng, Thirumaleshwara N. Bhat, Kian Siong Ang, S. Vicknesh, Subramaniam Arulkumaran, and Surani Bin Dolmanan. 2015. “Record-Low Contact Resistance for InAlN/AlN/GaN High Electron Mobility Transistors on Si with Non-Gold Metal.” Japanese Journal of Applied Physics 54 (March): 04DF12. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........2ff03d60a4efe7fcda6a53b576855cb7&authtype=sso&custid=ns315887.