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Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process
Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process
- Source :
- Journal of Crystal Growth. 517:59-63
- Publication Year :
- 2019
- Publisher :
- Elsevier BV, 2019.
-
Abstract
- Previous numerical simulations carried out for the TSSG process of SiC crystal have shown that the downward flow developing in the melt under the seed crystal induces radial growth rate non-uniformity. In order to minimize the adverse effect of this flow, an adjoint-based sensitivity analysis was performed and an optimal crucible temperature condition was determined. The analysis at the initial state showed that the middle region of the crucible sidewall is the most sensitive region for the optimization of the objective functional. At the optimized state, growth rate uniformity is significantly improved without any reduction in growth rate. Furthermore, this optimized state is stable within a range of crucible temperature perturbations.
- Subjects :
- 010302 applied physics
Materials science
Flow (psychology)
Crucible
Crystal growth
02 engineering and technology
Mechanics
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Inorganic Chemistry
Crystal
Condensed Matter::Superconductivity
0103 physical sciences
Dielectric heating
Materials Chemistry
Sensitivity (control systems)
Growth rate
0210 nano-technology
Seed crystal
Subjects
Details
- ISSN :
- 00220248
- Volume :
- 517
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........2fd8b314a7c4c742ebb01d1a80bebf14
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2019.04.001