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Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process

Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process

Authors :
Takashi Horiuchi
Yasunori Okano
Toru Ujihara
Lei Wang
Sadik Dost
Atsushi Sekimoto
Source :
Journal of Crystal Growth. 517:59-63
Publication Year :
2019
Publisher :
Elsevier BV, 2019.

Abstract

Previous numerical simulations carried out for the TSSG process of SiC crystal have shown that the downward flow developing in the melt under the seed crystal induces radial growth rate non-uniformity. In order to minimize the adverse effect of this flow, an adjoint-based sensitivity analysis was performed and an optimal crucible temperature condition was determined. The analysis at the initial state showed that the middle region of the crucible sidewall is the most sensitive region for the optimization of the objective functional. At the optimized state, growth rate uniformity is significantly improved without any reduction in growth rate. Furthermore, this optimized state is stable within a range of crucible temperature perturbations.

Details

ISSN :
00220248
Volume :
517
Database :
OpenAIRE
Journal :
Journal of Crystal Growth
Accession number :
edsair.doi...........2fd8b314a7c4c742ebb01d1a80bebf14
Full Text :
https://doi.org/10.1016/j.jcrysgro.2019.04.001