A new 3 level 4in1 T-type IGBT module with low internal inductance and optimized 6.1st/7th generation 1200V/650V chipset for UPS and PV inverter application

Authors :: Marco Honsberg
Akiko Goto
Eric R. Motto
Source :: 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).
Publication Year :: 2015
Publisher :: IEEE, 2015.
Abstract: Energy efficiency requirements of PV-inverter and UPS can be reached through multi-level IGBT topologies. A 3-level T-type topology utilizing dedicated 650V and 1200V IGBT and free-wheeling Diode chips (FwDi) and low inductance module construction are essential to create a performing IGBT module for these applications.

Subjects :: Engineering
Chipset
business.industry
Internal inductance
Electrical engineering
Electronic engineering
Inverter
Topology (electrical circuits)
Insulated-gate bipolar transistor
Network topology
business
Diode
Efficient energy use

Database :: OpenAIRE
Journal :: 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)
Accession number :: edsair.doi...........2fd1b256c7ea67e19d05699387766078
Full Text :: https://doi.org/10.1109/epe.2015.7309215

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