Nanoelectrode THz photomixer using a MOCVD-grown InGaAs thin layer

Authors :: Sang-Pil Han
Dong Woo Park
Hyun Soo Kim
Kyung Hyun Park
Kyeong Sun Choi
Il-Min Lee
Eui Su Lee
Jeong-Woo Park
Kiwon Moon
Source :: 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
Publication Year :: 2017
Publisher :: IEEE, 2017.
Abstract: By adopting nanoelectrodes, the performances of THz photo-conductive antennas (PCAs) and photomixers (PMs) have been significantly improved. On the extension of our previous works, here we present a nanoelectrode PM for homodyne THz detection, free from low-temperature-grown semiconductors. It was realized by utilizing the electric field enhancement effect by the nanoelectrode, which may be applied to various kinds of optoelectronic devices in general.

Database :: OpenAIRE
Journal :: 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Accession number :: edsair.doi...........2fcb8592b0e00e61a8a8874444555950
Full Text :: https://doi.org/10.1109/irmmw-thz.2017.8066849