The effect of exposure to arsenic flow on the optical properties of quantum dot arrays in the InAs/GaAs(100) system

Authors :: Vladimir G. Dubrovskii
Alexander A. Tonkikh
N. K. Polyakov
V. A. Egorov
V. M. Ustinov
G. E. Cirlin
Yu. B. Samsonenko
N. V. Kryzhanovskaya
Source :: Technical Physics Letters. 30:272-274
Publication Year :: 2004
Publisher :: Pleiades Publishing Ltd, 2004.
Abstract: The optical properties of quantum dot arrays in the MBE-grown InAs/GaAs(100) epitaxial system with an effective InAs layer thickness of 1.9 monolayers were studied in samples exposed to the beam of As4 for various times after switching off the In beam. The results of photoluminescence measurements showed that the emission wavelength increased with the exposure time within certain limits. This behavior agrees with predictions of the kinetic model of the initial stage of quantum dot formation.

Subjects :: Photoluminescence
Materials science
Physics and Astronomy (miscellaneous)
Condensed Matter::Other
business.industry
chemistry.chemical_element
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Epitaxy
Condensed Matter::Materials Science
Wavelength
chemistry
Quantum dot laser
Quantum dot
Monolayer
Optoelectronics
business
Arsenic
Beam (structure)

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