Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs

Authors :: Ming-Ming Liang
Xueqin Lv
Lei-Ying Ying
Baoping Zhang
Guoen Weng
Li Sun
Jiang-Yong Zhang
Source :: Physica E: Low-dimensional Systems and Nanostructures. 60:166-169
Publication Year :: 2014
Publisher :: Elsevier BV, 2014.
Abstract: National Natural Science Foundation of China [61106044, 61274052]; Doctoral Program Foundation of Institutions of Higher Education of China [20110121110029]

Subjects :: Photoluminescence
Materials science
business.industry
Annealing (metallurgy)
law
Optoelectronics
Condensed Matter Physics
business
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Light-emitting diode
law.invention

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