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Threshold Voltage Setting Method for Layer Selection by Multi-Level Operation in Channel Stacked NAND Flash Memory
- Source :
- Journal of Nanoscience and Nanotechnology. 17:3386-3389
- Publication Year :
- 2017
- Publisher :
- American Scientific Publishers, 2017.
- Subjects :
- Materials science
Nand flash memory
business.industry
Biomedical Engineering
Bioengineering
General Chemistry
Condensed Matter Physics
Threshold voltage
Electronic engineering
General Materials Science
Layer (object-oriented design)
business
Selection (genetic algorithm)
Computer hardware
Communication channel
Subjects
Details
- ISSN :
- 15334880
- Volume :
- 17
- Database :
- OpenAIRE
- Journal :
- Journal of Nanoscience and Nanotechnology
- Accession number :
- edsair.doi...........2eb0a3394af1cd251e1d9e7b03561471
- Full Text :
- https://doi.org/10.1166/jnn.2017.14043