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Study of growing zinc oxide on polycrystalline silicon/glass substrate prepared by aluminum-induced crystallization of amorphous silicon
- Source :
- Materials Science in Semiconductor Processing. 26:677-680
- Publication Year :
- 2014
- Publisher :
- Elsevier BV, 2014.
-
Abstract
- Zinc oxide (ZnO) was grown on a polycrystalline silicon (pc-Si)/glass substrate prepared by the aluminum-induced crystallization (AIC) of amorphous silicon. ZnO directly grown on the AIC-pc-Si exhibits many defects with a distribution unlike that of conventional ZnO; the defect density is highest near the conduction band and decreases near the valence band. The defects can be greatly suppressed by depositing an epitaxial silicon (Epi-Si) layer on the AIC-pc-Si. The resulting defect distribution is similar to that of ZnO grown on a crystalline Si (c-Si) substrate. X-ray diffraction shows that the epitaxial silicon layer can improve the crystallization of ZnO. However, the AIC-pc-Si and Epi-Si/AIC-pc-Si substrates exhibit rougher surfaces; consequently, the ZnO has a more random structure and lower density than that grown on a c-Si substrate. X-ray photoelectron spectroscopy demonstrates that as compared to the ZnO grown on the AIC-pc-Si, the defect ratio could be dramatically reduced from 0.70 to 0.56 by depositing an epitaxial silicon layer on AIC-pc-Si, and the defect ratio is about the same as that (0.55) for the ZnO grown on a c-Si substrate.
- Subjects :
- Amorphous silicon
Materials science
Mechanical Engineering
Inorganic chemistry
Nanocrystalline silicon
chemistry.chemical_element
Substrate (electronics)
Zinc
engineering.material
Condensed Matter Physics
law.invention
chemistry.chemical_compound
Polycrystalline silicon
Chemical engineering
X-ray photoelectron spectroscopy
chemistry
Mechanics of Materials
law
engineering
General Materials Science
Crystallization
Layer (electronics)
Subjects
Details
- ISSN :
- 13698001
- Volume :
- 26
- Database :
- OpenAIRE
- Journal :
- Materials Science in Semiconductor Processing
- Accession number :
- edsair.doi...........2ead384ea4c15fb7771dbf7c398c1ddf