Cite
Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide
MLA
Gennadii I. Ryabtsev, et al. “Light Emitting Diode–photodiode Optoelectronic Pairs Based on the InAs/InAsSb/InAsSbP Heterostructure for the Detection of Carbon Dioxide.” Semiconductors, vol. 49, July 2015, pp. 980–83. EBSCOhost, https://doi.org/10.1134/s1063782615070052.
APA
Gennadii I. Ryabtsev, P. V. Shpak, Yu. P. Yakovlev, E. V. Kunitsyna, V. V. Sherstnev, V. V. Parashchuk, M. A. Shchemelev, V. V. Kabanov, A. G. Ryabtsev, M. V. Bogdanovich, Dzmitry M. Kabanau, I. A. Andreev, T. V. Bezyazychnaya, & Y. V. Lebiadok. (2015). Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide. Semiconductors, 49, 980–983. https://doi.org/10.1134/s1063782615070052
Chicago
Gennadii I. Ryabtsev, P. V. Shpak, Yu. P. Yakovlev, E. V. Kunitsyna, V. V. Sherstnev, V. V. Parashchuk, M. A. Shchemelev, et al. 2015. “Light Emitting Diode–photodiode Optoelectronic Pairs Based on the InAs/InAsSb/InAsSbP Heterostructure for the Detection of Carbon Dioxide.” Semiconductors 49 (July): 980–83. doi:10.1134/s1063782615070052.