Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide

The spectral characteristics of light emitting diodes based on a InAs/InAsSb/InAsSbP heterostructure, which emit in a wavelength range of 3.5–4.5 µm, are investigated experimentally. It is shown that the temperature shift of the maximum emission wavelength of a light emitting diode in the temperature range 80–313 K is 1.8 nm/K. The temperature dependence of the band gap of the InAs0.88Sb0.12 active layer is described by the Varshni formula with the characteristic parameters: Eg0 = 0.326 eV, a = 2.917 × 10–4 eV/K, and s = 168.83 K. The results of our measurements of the concentrations of carbon dioxide (CO2) using the studied light emitting diodes show the possibility of the reliable detection of CO2 in the concentration range 300–100000 ppm.