Cite
In-Situ Low Energy Ion Milling with a FIB-SEM for TEM lift-out Sample Preparation of Copper Damascene Structures Fabricated with Low k porous SiLKTM Semiconductor Dielectric
MLA
Mary V. Moore, et al. “In-Situ Low Energy Ion Milling with a FIB-SEM for TEM Lift-out Sample Preparation of Copper Damascene Structures Fabricated with Low k Porous SiLKTM Semiconductor Dielectric.” Microscopy and Microanalysis, vol. 9, July 2003, pp. 874–75. EBSCOhost, https://doi.org/10.1017/s1431927603444371.
APA
Mary V. Moore, Joost Waeterloos, E. Beach, Steve Rozeveld, & Charlie Wood. (2003). In-Situ Low Energy Ion Milling with a FIB-SEM for TEM lift-out Sample Preparation of Copper Damascene Structures Fabricated with Low k porous SiLKTM Semiconductor Dielectric. Microscopy and Microanalysis, 9, 874–875. https://doi.org/10.1017/s1431927603444371
Chicago
Mary V. Moore, Joost Waeterloos, E. Beach, Steve Rozeveld, and Charlie Wood. 2003. “In-Situ Low Energy Ion Milling with a FIB-SEM for TEM Lift-out Sample Preparation of Copper Damascene Structures Fabricated with Low k Porous SiLKTM Semiconductor Dielectric.” Microscopy and Microanalysis 9 (July): 874–75. doi:10.1017/s1431927603444371.