Room‐temperature electron trapping in Al0.35Ga0.65As/GaAs modulation‐doped field‐effect transistors

Transient measurements of drain current are made as the gate voltage is pulsed in Al0.35Ga0.65As/GaAs depletion mode modulation‐doped field‐effect transistors. Large nonexponential decays are observed in the switching characteristics. Evidence is given which shows that these transients are caused by the emptying and filling of deep donors in the Al0.35Ga0.65As.