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Local control of the resistivity of graphene through mechanically induced switching of a ferroelectric superlattice
- Source :
- 2D Materials. 4:021022
- Publication Year :
- 2017
- Publisher :
- IOP Publishing, 2017.
-
Abstract
- We exploit nanoscale mechanically induced switching of an artificially layered ferroelectric material, used as an active substrate, to achieve the local manipulation of the electrical transport properties of graphene. In Graphene Ferroelectric Field Effect Transistors (GFeFETs), the graphene channel's charge state is controlled by an underlying ferroelectric layer. The tip of an atomic force microscope (AFM) can be used to mechanically 'write' nanoscale regions of the graphene channel and 'read' off the modulation in the transport behavior. The written features associated with the switching of ferroelectric domains remain polarized until an electrical reset operation is carried out. Our result provides a method for flexible and reversible nano-scale manipulation of the transport properties of a broad class of 2D materials.
- Subjects :
- Materials science
Superlattice
Nanotechnology
02 engineering and technology
Substrate (electronics)
01 natural sciences
law.invention
law
Electrical resistivity and conductivity
0103 physical sciences
General Materials Science
010306 general physics
Nanoscopic scale
business.industry
Graphene
Mechanical Engineering
General Chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
Ferroelectricity
Mechanics of Materials
Modulation
Optoelectronics
Field-effect transistor
0210 nano-technology
business
Subjects
Details
- ISSN :
- 20531583
- Volume :
- 4
- Database :
- OpenAIRE
- Journal :
- 2D Materials
- Accession number :
- edsair.doi...........2e20f450d6b69cde3179238a0a777597