Carbon-induced faceting of Si(112)

The structural stability of the Si(112) surface has been investigated using low-energy electron diffraction (LEED). Heating between 950° C and 1150° C causes faceting to the (111), (113), (525) and (255) surfaces unless great care is taken to prevent carbon contamination. Increasing the carbon concentration increases the extent of the faceting. Removal of the carbon by heating to 1250° C returns the surface orientation to (112).