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Characteristics of 2D Ge-doped GaSe grown by low temperature liquid phase deposition under a controlled Se vapor pressure
- Source :
- Journal of Nanosciences: Current Research.
- Publication Year :
- 2018
- Publisher :
- OMICS Publishing Group, 2018.
Details
- ISSN :
- 25720813
- Database :
- OpenAIRE
- Journal :
- Journal of Nanosciences: Current Research
- Accession number :
- edsair.doi...........2db8d703cd4329991d6eeaf9807a0352
- Full Text :
- https://doi.org/10.4172/2572-0813.10000128