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Investigation of a latch-up immune silicon controlled rectifier for robust ESD application
- Source :
- 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
- Publication Year :
- 2017
- Publisher :
- IEEE, 2017.
-
Abstract
- A latch-up immune robust SCR with an N+ top layer and an additional Nwell region (Nwell2) is proposed in this paper. The N+ top layer and Nwell2 divide the original SCR into three new SCRs with sharing emitter, which provide the deeper ESD current (I esd ) path to improve the holding voltage (V h ) and failure current (I t2 ). The relation between V h and base-concentration (N b ) for LVTSCR is given to provide an in-depth insight into the mechanism for enhancing V h by changing N b . The N+ top layer and NWELL2 form three base regions (B1, B2 and B3) with different concentration to optimize the I ESD distribution and V h . The longer ESD current path improves the V h by reducing the current gain. The deeper current distribution makes the total temperature is endured by inner lattice instead of surface lattice, which improves the I t2 . DC and dynamic TLP simulation results show the V h = 5.3 V of proposed SCR is achieved with a higher failure current (I t2 ) of 1.68e-2A/μm.
- Subjects :
- 010302 applied physics
Materials science
Current distribution
business.industry
Electrical engineering
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Silicon-controlled rectifier
Lattice (order)
0103 physical sciences
Optoelectronics
0210 nano-technology
business
Common emitter
Voltage
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)
- Accession number :
- edsair.doi...........2db88a5e8b64ca1bda67796717062be4