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Fabrication and Characterization of p-CuI/n-Si Heterojunction Diode

Authors :
Lei Chen
Xing Zhong Lu
An Cheng Xu
Xi Fang Zhu
Ruo He Yao
Chao Xiong
Source :
Key Engineering Materials. 538:324-327
Publication Year :
2013
Publisher :
Trans Tech Publications, Ltd., 2013.

Abstract

The p-CuI /n-Si heterojunction diode have been prepared at a low cost by chemical method. The prepared hexagonal γ-CuI films are polycrystalline nature and observed preferential orientation along the (111) axis aligning with the growth direction. The heterojunction shows a good rectifying behavior and photovoltaic effects. The current and 1/C2 versus voltage curve of the p-CuI/ n-Si heterojunction diode was shown. The linear relationships of 1/C2 versus voltage curve imply that the built-in potential Vbi and the conduction band offset of the heterojunction ware found to be 1.5 eV and 0.98 eV, respectively. The current transport mechanism is dominated by the space-charge limited current (SCLC) conduction at forward bias voltages. The electronic potential barrier in p-CuI/n-Si heterojunction interface higher than hole at forward bias voltages. In this voltages area, a single carrier injuction was induced and the main current of p-CuI/n-Si heterojunction is hole current.This heterojunction diode can be good used for light emission devices and photovoltaic devices.

Details

ISSN :
16629795
Volume :
538
Database :
OpenAIRE
Journal :
Key Engineering Materials
Accession number :
edsair.doi...........2da9bab0372c1b9a9b37d33b945de44a