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Fabrication and Characterization of p-CuI/n-Si Heterojunction Diode
- Source :
- Key Engineering Materials. 538:324-327
- Publication Year :
- 2013
- Publisher :
- Trans Tech Publications, Ltd., 2013.
-
Abstract
- The p-CuI /n-Si heterojunction diode have been prepared at a low cost by chemical method. The prepared hexagonal γ-CuI films are polycrystalline nature and observed preferential orientation along the (111) axis aligning with the growth direction. The heterojunction shows a good rectifying behavior and photovoltaic effects. The current and 1/C2 versus voltage curve of the p-CuI/ n-Si heterojunction diode was shown. The linear relationships of 1/C2 versus voltage curve imply that the built-in potential Vbi and the conduction band offset of the heterojunction ware found to be 1.5 eV and 0.98 eV, respectively. The current transport mechanism is dominated by the space-charge limited current (SCLC) conduction at forward bias voltages. The electronic potential barrier in p-CuI/n-Si heterojunction interface higher than hole at forward bias voltages. In this voltages area, a single carrier injuction was induced and the main current of p-CuI/n-Si heterojunction is hole current.This heterojunction diode can be good used for light emission devices and photovoltaic devices.
Details
- ISSN :
- 16629795
- Volume :
- 538
- Database :
- OpenAIRE
- Journal :
- Key Engineering Materials
- Accession number :
- edsair.doi...........2da9bab0372c1b9a9b37d33b945de44a