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Electron-beam deposited SiO2 investigated by scanning capacitance microscopy
- Source :
- Applied Physics Letters. 88:122116
- Publication Year :
- 2006
- Publisher :
- AIP Publishing, 2006.
-
Abstract
- The quality of electron-beam deposited, few nanometers thick, SiO2 layers on silicon substrates was investigated by scanning capacitance microscopy and spectroscopy. Rapid thermal annealing had to be applied prior to the capacitance versus voltage [C(V)] measurements to obtain typical metal-oxide-semiconductor behavior, and it was found that the total oxide charge is negative on the deposited oxide layers. Higher annealing temperatures resulted in an overall reduction of the number of oxide charges. This opens up the possibility to use electron-beam deposited SiO2 as a dielectric material in metal-oxide-semiconductor prototyping applications.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Silicon
Annealing (metallurgy)
business.industry
Analytical chemistry
Oxide
chemistry.chemical_element
Scanning capacitance microscopy
Dielectric
Capacitance
chemistry.chemical_compound
Vacuum deposition
chemistry
Optoelectronics
Spectroscopy
business
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 88
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........2d915255b2eb1ac973c3ea29dba9a186