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Profiling the local carrier concentration across a semiconductor quantum dot
- Source :
- Applied Physics Letters. 106:192101
- Publication Year :
- 2015
- Publisher :
- AIP Publishing, 2015.
-
Abstract
- We profile the local carrier concentration, n, across epitaxial InAs/GaAs quantum dots (QDs) consisting of 3D islands on top of a 2D alloy layer. We use scanning thermoelectric microscopy to measure a profile of the temperature gradient-induced voltage, which is converted to a profile of the local Seebeck coefficient, S. The S profile is then converted to a conduction band-edge profile and compared with Poisson-Schrodinger band-edge simulations. Our combined computational-experimental approach suggests a reduced carrier concentration in the QD center in comparison to that of the 2D alloy layer. The relative roles of free carrier trapping and/or dopant expulsion are discussed.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Dopant
business.industry
Analytical chemistry
Electronic structure
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Concentration ratio
Gallium arsenide
Condensed Matter::Materials Science
chemistry.chemical_compound
chemistry
Quantum dot
Seebeck coefficient
Thermoelectric effect
Optoelectronics
Charge carrier
business
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 106
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........2d73c16ba1241f35248c20cc1d0b363b
- Full Text :
- https://doi.org/10.1063/1.4919919