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Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires
- Source :
- Applied Physics Letters. 109:143904
- Publication Year :
- 2016
- Publisher :
- AIP Publishing, 2016.
-
Abstract
- MoSe2-doped ultralong Se microwires of length/diameter ratio in the order of ∼240 are synthesized by hydrothermal method. An electronic resistive switching memory (ERSM) device using a single MoSe2-doped ultralong Se microwire is attained. The ERSM exhibits stable resistance ratio of ∼102 for 5000 s, highly stable performance during 500 stressing cycles, and excellent immunity to the frequency of the driving voltage. By investigating the dynamic processes of trap filling, de-trapping, and free-charge migration, trap-controlled space-charge-limited current mechanism is found to dominate the observed ERSM behaviour.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
business.industry
Doping
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
Hydrothermal circulation
0104 chemical sciences
Diameter ratio
Electrical resistivity and conductivity
Molybdenum compounds
Optoelectronics
Resistive switching memory
0210 nano-technology
business
Voltage
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 109
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........2d2baf694fdeeff915ac43444c29c623