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Chemical Mechanical Polishing of Low‐Dielectric‐Constant Polymers: Hydrogen Silsesquioxane and Methyl Silsesquioxane
- Source :
- Journal of The Electrochemical Society. 146:3004-3008
- Publication Year :
- 1999
- Publisher :
- The Electrochemical Society, 1999.
-
Abstract
- In the study, the film properties and chemical mechanical polishing (CMP) characteristics of the low‐dielectric‐constant materials hydrogen silsesquioxane (HSQ) and methyl silsesquioxane (MSQ) were presented. The Fourier transform infrared spectra, refractive index, dielectric constant, and atomic force microscopy results showed the successful preparation of the HSQ and MSQ films. The CMP characteristics of both materials were studied by two different slurries, A‐1 and B‐1. Our results showed that the CMP removal rate and nonuniformity increased with increasing the slurry solid content. The removal rate of the polished HSQ film was much larger than that of the polished MSQ film due to the hydrophobic surface of the MSQ film. The removal rate using the A‐1 slurry was larger than the B‐1 slurry for polishing both films. This result can be explained from the consideration of the isoelectric point and the electrostatic force between the abrasive surface and the film surface. The downforce pressure of the CMP process also showed a significant effect on the removal rate and the nonuniformity of the polished HSQ film. © 1999 The Electrochemical Society. All rights reserved.
- Subjects :
- chemistry.chemical_classification
Renewable Energy, Sustainability and the Environment
Chemistry
Abrasive
Polishing
Dielectric
Polymer
Condensed Matter Physics
Silsesquioxane
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Chemical-mechanical planarization
Polymer chemistry
Materials Chemistry
Electrochemistry
Slurry
Composite material
Hydrogen silsesquioxane
Subjects
Details
- ISSN :
- 19457111 and 00134651
- Volume :
- 146
- Database :
- OpenAIRE
- Journal :
- Journal of The Electrochemical Society
- Accession number :
- edsair.doi...........2c950a662d30860b1f9ce4882569ba9c