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Noise in JFET transistors at low temperatures
- Source :
- Czechoslovak Journal of Physics. 46:2747-2748
- Publication Year :
- 1996
- Publisher :
- Springer Science and Business Media LLC, 1996.
-
Abstract
- The ability to work at low temperatures as well as the noise parameters of silicon junction field effect transistors were investigated. Some properties of the transistors at low temperatures result from self-heating of the silicon crystal of the transistor. The noise voltage of a JFET at low temperatures is determined by the temperature of its crystal, which is much higher than the ambient temperature of the transistor.
- Subjects :
- Materials science
Silicon
business.industry
Transistor
Bipolar junction transistor
General Physics and Astronomy
chemistry.chemical_element
JFET
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Noise (electronics)
law.invention
Monocrystalline silicon
Computer Science::Hardware Architecture
Computer Science::Emerging Technologies
chemistry
law
Optoelectronics
Field-effect transistor
Silicon bandgap temperature sensor
business
Subjects
Details
- ISSN :
- 15729486 and 00114626
- Volume :
- 46
- Database :
- OpenAIRE
- Journal :
- Czechoslovak Journal of Physics
- Accession number :
- edsair.doi...........2c297be332ee3645b67a2c0bb416743c