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Noise in JFET transistors at low temperatures

Authors :
Waldemar Nawrocki
Source :
Czechoslovak Journal of Physics. 46:2747-2748
Publication Year :
1996
Publisher :
Springer Science and Business Media LLC, 1996.

Abstract

The ability to work at low temperatures as well as the noise parameters of silicon junction field effect transistors were investigated. Some properties of the transistors at low temperatures result from self-heating of the silicon crystal of the transistor. The noise voltage of a JFET at low temperatures is determined by the temperature of its crystal, which is much higher than the ambient temperature of the transistor.

Details

ISSN :
15729486 and 00114626
Volume :
46
Database :
OpenAIRE
Journal :
Czechoslovak Journal of Physics
Accession number :
edsair.doi...........2c297be332ee3645b67a2c0bb416743c