Back to Search
Start Over
An alternative route for efficient optical indirect-gap excitation in Ge
- Source :
- Applied Physics Letters. 105:042101
- Publication Year :
- 2014
- Publisher :
- AIP Publishing, 2014.
-
Abstract
- We explored optical excitation pathways in the multivalley semiconductor Ge in an attempt to expedite selective electron injection into the indirect L-band-edge. An off-peak resonant excitation route was developed, which offers the pumping efficiency outperforming the phonon-assisted near-indirect-edge absorption by more than six orders of magnitude. The valley selectivity results from the intra-valley relaxation that separates electrons and holes in momentum space following excitation. Fortuitously, the widely used green laser, 532 nm, is found to be nearly ideally suited to the efficient L-valley-selective excitation in Ge. Such valley-specific pumping may help clarify the otherwise complicated electron dynamics involving intervalley processes.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 105
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........2bd50bfa1d9eef41ce06675b1941da26
- Full Text :
- https://doi.org/10.1063/1.4891755