Narrow band infrared emission studies from chalcogenide threshold switches

Infrared emission has been observed during the ON-state of amorphous chalcogenide As 50 Te 50 threshold switching devices. The emission is a line emission of wavelength corresponding to half the band gap of the OFF-state. The intensity of radiation is virtually independent of device area; the radiation output is temperature independent and exhibits thresholds in both its current and thickness dependence; the radiation power increases with the excess device power above the threshold power. The emission has been studied with both metal and semiconductor contacts to the amorphous layer. An analysis of the data indicates that simple spontaneous emission is not present but that stimulated emission could be occurring.