Improvement of XPM efficiency in InGaAs/AlAsSb coupled quantum wells using InAlAs coupling barrier for intersubband transition optical switch

Authors :: Masanori Nagase
Takasi Simoyama
Teruo Mozume
Ryoichi Akimoto
Hiroshi Ishikawa
Toshifumi Hasama
Source :: OFC/NFOEC 2008 - 2008 Conference on Optical Fiber Communication/National Fiber Optic Engineers Conference.
Publication Year :: 2008
Publisher :: IEEE, 2008.
Abstract: The InGaAs/InAlAs/AlAsSb coupled quantum well is developed to use in Mach-Zehnder interferometric switch utilizing intersubband transition. Strong well-well coupling produced by this structure enhances cross phase modulation, which is effective in reducing the switching energy.

Subjects :: Condensed Matter::Quantum Gases
Coupling
Materials science
Condensed Matter::Other
business.industry
Cross-phase modulation
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Optical switch
Gallium arsenide
chemistry.chemical_compound
Light intensity
chemistry
Optoelectronics
business
Phase modulation
Indium gallium arsenide
Quantum well

Database :: OpenAIRE
Journal :: OFC/NFOEC 2008 - 2008 Conference on Optical Fiber Communication/National Fiber Optic Engineers Conference
Accession number :: edsair.doi...........2b9b215e43c92a59e2a777b556d797fe
Full Text :: https://doi.org/10.1109/ofc.2008.4528072

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