Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1−X Sn x Fine Structures by Using Synchrotron X-ray Microdiffraction

We examined the formation of locally strained Ge nanostructures sandwiched between Ge1−x Sn x stressors using metal-organic chemical vapor deposition method. We have investigated the microscopic local strain and stress in the Ge/Ge1−x Sn x heterostructures using synchrotron microdiffraction and finite element method calculation. The microdiffraction measurement for an asymmetric lattice plane enables directly quantitative evaluation of the strain value of an individual Ge fine line structure with a few tens of nanometers width. An in-plane compressive strain value of 0.9% is achieved for a 30 nm-width Ge line with Ge1−x Sn x stressors, which corresponds to a compressive stress of 1.2 GPa.