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High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs
- Source :
- IEEE Journal of the Electron Devices Society. 11:262-268
- Publication Year :
- 2023
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2023.
Details
- ISSN :
- 21686734
- Volume :
- 11
- Database :
- OpenAIRE
- Journal :
- IEEE Journal of the Electron Devices Society
- Accession number :
- edsair.doi...........2b7d6631067d28749567c95716e69772
- Full Text :
- https://doi.org/10.1109/jeds.2023.3270634