Recent progress in development of radiation tolerant image sensor with field emitter array

Authors :: Tomoya Igari
Yasuhito Gotoh
Masafumi Akiyoshi
Yoichiro Neo
Hidenori Mimura
Masayoshi Nagao
Tamotsu Okamoto
Nobuhiro Sato
Tomoaki Masuzawa
Ikuji Takagi
Source :: 2018 31st International Vacuum Nanoelectronics Conference (IVNC).
Publication Year :: 2018
Publisher :: IEEE, 2018.
Abstract: A prototype image sensor is developed using cadmium telluride-based photodiode and a volcano-structured FEA. Radiation tolerance of each component was tested by irradiating gamma-ray using cobalt-60 source. Gamma-ray tolerance of up to 1.2 MGy was confirmed for both FEA and photodiode.

Subjects :: 010302 applied physics
Materials science
business.industry
Field emitter array
02 engineering and technology
Radiation
021001 nanoscience & nanotechnology
01 natural sciences
Cadmium telluride photovoltaics
Photodiode
law.invention
Radiation tolerance
law
0103 physical sciences
Optoelectronics
Image sensor
0210 nano-technology
business

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