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GaInAs‐InP multiquantum well structures grown by metalorganic gas phase epitaxy with adducts
- Source :
- Applied Physics Letters. 48:911-912
- Publication Year :
- 1986
- Publisher :
- AIP Publishing, 1986.
-
Abstract
- We report the first successful growth of GaInAs‐InP multiquantum well structures by metalorganic gas phase epitaxy with adducts in one single reactor. The properties of the two‐dimensional electron gas in these samples were studied in detail by photoluminescence measurements and Shubnikov–de Haas experiments.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 48
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........2b4560af5310bdd24905bae2ca65a47e