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Single-Event Transient Response of Comparator Pre-Amplifiers in a Complementary SiGe Technology
- Source :
- IEEE Transactions on Nuclear Science. 64:89-96
- Publication Year :
- 2017
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2017.
-
Abstract
- The single-event transient (SET) response of the pre-amplification stage of two latched comparators designed using either npn or pnp silicon-germanium heterojunction bipolar transistors (SiGe HBTs) is investigated via two-photon absorption (TPA) carrier injection and mixed-mode TCAD simulations. Experimental data and TCAD simulations showed an improved SET response for the pnp comparator circuit. 2-D raster scans revealed that the devices in the pnp circuit exhibit a reduction in sensitive area of up to 80% compared to their npn counterparts. In addition, by sweeping the input voltage, the sensitive operating region with respect to SETs was determined. By establishing a figure-of-merit, relating the transient peaks and input voltage polarities, the pnp device was determined to have a 21.4% improved response with respect to input voltage. This study has shown that using pnp devices is an effective way to mitigate SETs, and could enable further radiation-hardening-by-design techniques.
- Subjects :
- Nuclear and High Energy Physics
Materials science
Comparator
010308 nuclear & particles physics
Amplifier
Transistor
Bipolar junction transistor
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Silicon-germanium
law.invention
chemistry.chemical_compound
Nuclear Energy and Engineering
chemistry
law
0103 physical sciences
Electronic engineering
Transient response
Transient (oscillation)
Electrical and Electronic Engineering
0210 nano-technology
Voltage
Subjects
Details
- ISSN :
- 15581578 and 00189499
- Volume :
- 64
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Nuclear Science
- Accession number :
- edsair.doi...........2af7b97dc33bb6fd7b3e0913ad10d4de