Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing

Authors :: Kwan Soo Kim
Hirokazu Fukidome
Maki Suemitsu
Tetsuya Suemitsu
Taiichi Otsuji
Goon Ho Park
Won-Ju Cho
Source :: Japanese Journal of Applied Physics. 56:06GF09
Publication Year :: 2017
Publisher :: IOP Publishing, 2017.

Subjects :: 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Annealing (metallurgy)
General Engineering
General Physics and Astronomy
02 engineering and technology
Dielectric
021001 nanoscience & nanotechnology
01 natural sciences
Microwave assisted
Quality gate
0103 physical sciences
Optoelectronics
Epitaxial graphene
0210 nano-technology
business

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