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Low power W:AlOx/WOx bilayer resistive switching structure based on conductive filament formation and rupture mechanism
- Source :
- Applied Physics Letters. 102:173503
- Publication Year :
- 2013
- Publisher :
- AIP Publishing, 2013.
-
Abstract
- We report the design and fabrication of W:AlOx/WOx bilayer based resistive switching cells in a standard 0.18 μm CMOS process with only one extra mask. The devices show excellent performance with low power consumption. Low operation voltages (SET voltage
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 102
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........2ad1349cf991fc1dbfdf0cf46206a838
- Full Text :
- https://doi.org/10.1063/1.4803462