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Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature
- Source :
- Microelectronic Engineering. 87:1834-1837
- Publication Year :
- 2010
- Publisher :
- Elsevier BV, 2010.
-
Abstract
- This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity and analyzes the optical characterization of cavity modes at room temperature. Single InAs/InGaAs quantum dots (QDs) layer was embedded in a GaAs waveguide layer grown on an Al"0"."7Ga"0"."3As layer and GaAs substrate. The patterning of the structure and the membrane release were achieved by using electron-beam lithography, reaction ion etching, inductively coupled plasma etching and selective wet etching. The micro-luminescence spectrum is recorded from the fabricated nanocavities, and it is found that some high-order cavity modes are clearly observed besides the lowest-order resonant mode is exhibited in spite of much high rate of nonradiative recombination. The variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed to improve the probability of achieving spectral coupling of a single QD to a cavity mode.
- Subjects :
- Materials science
Condensed Matter::Other
business.industry
Physics::Optics
Substrate (electronics)
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Waveguide (optics)
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Condensed Matter::Materials Science
Optics
Quantum dot
Etching (microfabrication)
Optoelectronics
Electrical and Electronic Engineering
business
Lithography
Electron-beam lithography
Photonic crystal
Non-radiative recombination
Subjects
Details
- ISSN :
- 01679317
- Volume :
- 87
- Database :
- OpenAIRE
- Journal :
- Microelectronic Engineering
- Accession number :
- edsair.doi...........2a638cbcc9d3bba5e462ac1bd47660f7