Sidewall electrode TiO x /TiO x N y resistive random access memory with excellent memory window control and reliability using plasma oxidation and a novel degradation-detecting writing algorithm

A TiO x /TiO x N y resistive random access memory (ReRAM) with a sidewall bottom electrode (BE) is demonstrated for the first time. Several interesting characteristics that are very desirable for high reliability memory applications are observed: (1) a stable RESET and SET resistance switching window even without write verification, (2) good 250 °C data retention, (3) ReRAM switching instability after cycling is monitored and corrected, resulting in good reliability, and (4) using only complementary metal oxide semiconductor (CMOS) familiar materials and processes, thus very manufacture-friendly. The thickness and quality of TiO x and TiO x N y are well controlled by plasma oxidation, and a large resistance switching window (>10×), a low operation voltage, and good reliability are realized.