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Electric-field-induced quenching effect of Raman scattering in Mg-doped p-GaN
- Source :
- Applied Physics Letters. 83:3483-3485
- Publication Year :
- 2003
- Publisher :
- AIP Publishing, 2003.
-
Abstract
- We have studied the influence of electric fields on the Mg-doped p-GaN by using Raman scattering and photocurrent (PC) measurement. It has been observed that the E2 (LO) mode was quenched upon increasing the electric field. To explain this effect, the combined results obtained from the electric-field-induced Raman scattering and the PC measurement were analyzed. As a result, we have found that the damping of E2 (LO) mode is caused to the phonon–hole scattering due to a strong interaction between the phonons and the photogenerated hole carriers with increasing the applied electric field.
- Subjects :
- Photocurrent
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Scattering
Phonon
Wide-bandgap semiconductor
Molecular physics
Condensed Matter::Materials Science
symbols.namesake
X-ray Raman scattering
Electric field
symbols
Optoelectronics
business
Raman spectroscopy
Raman scattering
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 83
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........2988b0c96eb0e73132397f105c6163ae