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Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers

Authors :
Baoping Zhang
Lei-Ying Ying
Wenjie Liu
Jiang-Yong Zhang
Xiao-Long Hu
Source :
Applied Physics Letters. 104:251116
Publication Year :
2014
Publisher :
AIP Publishing, 2014.

Abstract

Continuous wave (CW) lasing of electrically injected GaN-based vertical cavity surface emitting lasers (VCSELs) was achieved at room temperature. First, a high quality factor (Q) VCSEL-structured device with very narrow linewidth of 0.12 nm, corresponding to a Q-value of 3570 was obtained through two-step substrate transfer technique. However, poor heat dissipation ability prevented the device from lasing. Based on the high-Q resonant cavity design, we further fabricated vertical-structured VCSELs through metal bonding technique on Si substrate. CW lasing from vertical-structured VCSELs was observed with threshold current of density of 1.2 kA/cm2 and lasing linewidth of about 0.20 nm.

Details

ISSN :
10773118 and 00036951
Volume :
104
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........28fd069de3f5a4d320fdfad554b8410f