Lattice dilation acrossn-InP-substrates and its influence on material properties of InP/InGaAsP- double-heterostructures

Authors :: J. Kräusslich
R. Staske
A. Knauer
R. Kittner
Source :: Journal of Electronic Materials. 20:1095-1098
Publication Year :: 1991
Publisher :: Springer Science and Business Media LLC, 1991.
Abstract: Precise measurements of lattice parameter and photoluminescence were performed across InP-substrates and InP/InGaAsP-DHS. They show a lattice dilation in a region with enriched free carrier concentration if strongn-type doped InP-substrates of faceted 〈111〉-grown LEC-crystals were used. Strain gradients and mismatch problems have to take into consideration.

Subjects :: Photoluminescence
Materials science
Condensed matter physics
Solid-state physics
Doping
Heterojunction
Condensed Matter Physics
Free carrier
Electronic, Optical and Magnetic Materials
Lattice constant
Lattice (order)
Materials Chemistry
Electrical and Electronic Engineering
Material properties

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