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High performance 0.1 μm CMOS devices with 1.5 V power supply
- Source :
- Proceedings of IEEE International Electron Devices Meeting.
- Publication Year :
- 2002
- Publisher :
- IEEE, 2002.
-
Abstract
- This paper presents the design, fabrication, and characterization of high-performance 0.1 /spl mu/m-channel CMOS devices with dual n/sup +p/sup +/ polysilicon gates on 35 /spl Aring/-thick gate oxide. A 22 ps/stage CMOS-inverter delay is obtained at a power supply voltage of 1.5 V. The highest unity-current-gain frequencies (f/sub T/) measured are 118 GHz for nMOSFET, and 67 GHz for pMOSFET. >
Details
- Database :
- OpenAIRE
- Journal :
- Proceedings of IEEE International Electron Devices Meeting
- Accession number :
- edsair.doi...........2856a22fec5bd0e54c65ab341387d8ec
- Full Text :
- https://doi.org/10.1109/iedm.1993.347383