Back to Search
Start Over
Si—O bond structure in slow‐ion deposited SiO2films
- Source :
- Journal of Applied Physics. 69:3354-3356
- Publication Year :
- 1991
- Publisher :
- AIP Publishing, 1991.
-
Abstract
- By impinging a beam of O+2 ions of energy 150 eV
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 69
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........282706fbc392af632006935aaa58c89a
- Full Text :
- https://doi.org/10.1063/1.348565