Band-Edge High-Performance Metal-Gate/High-$\kappa$ nMOSFET Using $\hbox{Hf}{-}\hbox{Si}/\hbox{HfO}_{2}$ Stack

Authors :: S. Yamaguchi
Kaori Tai
S. Kadomura
Takashi Ando
Heiji Watanabe
H. Iwamoto
Shinichi Yoshida
T. Hirano
Source :: IEEE Transactions on Electron Devices. 56:3223-3227
Publication Year :: 2009
Publisher :: Institute of Electrical and Electronics Engineers (IEEE), 2009.
Abstract: A record high electron mobility (248 cm2/V middots at E eff of 1 MV/cm) was obtained at T inv of 1.47 nm, with a band-edge effective work function, by a Hf-Si/HfO2 stack using gate-last process, resulting in I ON of 1178 muA/mum (I OFF of 100 nA/ mum ) at V dd of 1.0 V for a 45-nm gate nMOSFET without strain-enhanced technology.

Subjects :: Electron mobility
Materials science
Silicon
business.industry
Electrical engineering
chemistry.chemical_element
Electronic, Optical and Magnetic Materials
Stack (abstract data type)
chemistry
Logic gate
MOSFET
Optoelectronics
Work function
Electrical and Electronic Engineering
business
Metal gate
High-κ dielectric

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