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Preface to Symposium H: Post-Si-CMOS electronic devices: The role of Ge and III–V materials
- Source :
- Microelectronic Engineering. 88:323
- Publication Year :
- 2011
- Publisher :
- Elsevier BV, 2011.
Details
- ISSN :
- 01679317
- Volume :
- 88
- Database :
- OpenAIRE
- Journal :
- Microelectronic Engineering
- Accession number :
- edsair.doi...........275a56843d91c25468889666f1557157
- Full Text :
- https://doi.org/10.1016/j.mee.2011.01.037