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Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures
- Source :
- Applied Physics Letters. 80:2099-2101
- Publication Year :
- 2002
- Publisher :
- AIP Publishing, 2002.
-
Abstract
- The influence of different growth conditions on the In distribution in ultrathin InGaN insertions in a GaN matrix is investigated by high-resolution transmission electron microscopy and an appropriate image evaluation technique. It is demonstrated that the indium distribution represents dense arrays of In-rich nanodomains inserted in a layer with a lower indium concentration. The sizes of the In-rich regions are about 4–5 nm at a growth temperature of 720 °C. Increasing the growth temperature leads to a strong decrease in the of nanoisland density and, also, a moderate decrease in their lateral size. Increasing the trimethylindium/trimethylgallium ratio strongly increases the density of the islands, but the lateral size remains weakly effected. The observations are in agreement with a thermodynamic model of island formation including entropy effects.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Wide-bandgap semiconductor
chemistry.chemical_element
Nanotechnology
Chemical vapor deposition
Thermodynamic model
chemistry.chemical_compound
chemistry
Transmission electron microscopy
Chemical physics
Metalorganic vapour phase epitaxy
Trimethylgallium
Trimethylindium
Indium
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 80
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........2747681f65b352ae67311ecacd08c365