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Room-temperature electroluminescence from electron-hole plasmas in the metal–oxide–silicon tunneling diodes
- Source :
- Applied Physics Letters. 76:1516-1518
- Publication Year :
- 2000
- Publisher :
- AIP Publishing, 2000.
-
Abstract
- An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal–oxide–silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrons and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Silicon
Physics::Instrumentation and Detectors
business.industry
Band gap
Fermi level
chemistry.chemical_element
Electron hole
Electroluminescence
Condensed Matter::Materials Science
symbols.namesake
chemistry
symbols
Optoelectronics
Direct and indirect band gaps
business
Plasma recombination
Diode
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 76
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........27324ece95fdda4e4df36a9bcd73da13