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High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films
- Source :
- Electronic Materials Letters. 14:563-568
- Publication Year :
- 2018
- Publisher :
- Springer Science and Business Media LLC, 2018.
-
Abstract
- The material compositions of oxide films have been extensively investigated in an effort to improve the electrical characteristics of dielectrics which have been utilized in various electronic devices such as field-effect transistors, and storage capacitors. Significantly, solution-based compositions have attracted considerable attention as a highly effective and practical technique to replace vacuum-based process in large-area. Here, we demonstrate solution-processed composite films consisting of aluminum oxide (Al2O3) and boron nitride (BN), which exhibit remarkable dielectric properties through the optimization process. The leakage current of the optimized Al2O3–BN thin films was decreased by a factor of 100 at 3V, compared to pristine Al2O3 thin film without a loss of the dielectric constant or degradation of the morphological roughness. The characterization by X-ray photoelectron spectroscopy measurements revealed that the incorporation of BN with an optimized concentration into the Al2O3 dielectric film reduced the density of oxygen vacancies which act as defect states, thereby improving the dielectric characteristics.
- Subjects :
- 010302 applied physics
Materials science
Composite number
Oxide
02 engineering and technology
Dielectric
021001 nanoscience & nanotechnology
01 natural sciences
Electronic, Optical and Magnetic Materials
law.invention
chemistry.chemical_compound
Capacitor
chemistry
X-ray photoelectron spectroscopy
Boron nitride
law
0103 physical sciences
Thin film
Composite material
0210 nano-technology
Solution process
Subjects
Details
- ISSN :
- 20936788 and 17388090
- Volume :
- 14
- Database :
- OpenAIRE
- Journal :
- Electronic Materials Letters
- Accession number :
- edsair.doi...........26d3a2033f83b9242389c5c70a2cd5eb