Cite
Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements
MLA
Fan Zhang, et al. “Estimation of Carrier Leakage in InGaN Light Emitting Diodes from Photocurrent Measurements.” Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, Feb. 2014. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........268c59ee1267fb2be19c061cc3750bf7&authtype=sso&custid=ns315887.
APA
Fan Zhang, Hadis Morkoç, Morteza Monavarian, Vitaliy Avrutin, Shopan Hafiz, Serdal Okur, & Ümit Özgür. (2014). Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII.
Chicago
Fan Zhang, Hadis Morkoç, Morteza Monavarian, Vitaliy Avrutin, Shopan Hafiz, Serdal Okur, and Ümit Özgür. 2014. “Estimation of Carrier Leakage in InGaN Light Emitting Diodes from Photocurrent Measurements.” Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, February. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........268c59ee1267fb2be19c061cc3750bf7&authtype=sso&custid=ns315887.