New ArF Photoresist Based on Modified Maleic Anhydride Cycloolefin Polymers

We have designed and synthesized peculiar copolymers of norbornene-alt-malefic anhydride derivatives for 193nm lithography.1, 2 These polymers were synthesized by copolymerization of norbornene-malefic anhydride and substitution reaction with bulky alicyclic acid-labile protecting groups. They showed a good physical properties such as high thermal stability and high transmittance for 193nm UV light. Also, photoresists made of our polymers showed a good pattern profile, high resolution, high dry-etching resistance. In this study, we have investigated several polymers and photoresists for line-and-space lithography and contact-hole one.